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| Power Transistors 2SC5270, 2SC5270A Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 15.50.5 4.5 10.0 s Features q q q 3.20.1 5 26.50.5 3.00.3 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) (TC=25C) Ratings 1500 1600 1500 1600 600 5 20 12 8 120 3 150 -55 to +150 Unit 5 23.4 22.00.5 2.0 1.2 5 18.60.5 5 5 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to base voltage 2SC5270 2SC5270A 2SC5270 2SC5270A Symbol VCBO VCES VCEO VEBO ICP IC IB Ta=25C PC Tj Tstg 4.0 2.00.2 1.10.1 2.0 0.70.1 5.450.3 3.30.3 0.70.1 5.450.3 5.50.3 V 5 V 1 2 3 2.0 Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Junction temperature Storage temperature V V A A A W C C 1:Base 2:Collector 3:Emitter TOP-3E Full Pack Package s Electrical Characteristics Parameter 2SC5270 Collector cutoff current 2SC5270A 2SC5270 2SC5270A Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol Conditions VCB = 1000V, IE = 0 ICBO VCB = 1500V, IE = 0 VCB = 1600V, IE = 0 IEBO hFE VCE(sat) VBE(sat) fT tstg tf VEB = 5V, IC = 0 VCE = 5V, IC = 6A IC = 6A, IB = 1.5A IC = 6A, IB = 1.5A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 6A, IB1 = 1.5A, IB2 = -3A 3 1.5 0.12 2.5 0.2 5 min typ max 50 50 1 1 50 12 3 1.5 V V MHz s s Unit A mA A 1 Power Transistors PC -- Ta 140 102 2SC5270, 2SC5270A hFE -- IC VCE=5V VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 5000 IC/IB=4 Collector power dissipation PC (W) 120 Forward current transfer ratio hFE (1) 100 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink. (3) Without heat sink (PC=3.0W) TC=100C 25C 4000 80 3000 -25C 10 60 2000 TC=100C 25C -25C 40 1000 20 (2) (3) 0 0 20 40 60 80 100 120 140 160 1 1 10 102 103 104 105 0 102 103 104 105 Ambient temperature Ta (C) Collector current IC (mA) Collector current IC (mA) Area of safe operation (ASO) 100 ICP 10 IC 100ms 10ms t=100s 1ms Area of safe operation, horizontal operation ASO 50 f=64kHz, TC<90C Area of safe operation with respect to the single pulse overload curve at the time of switching ON, shutting down by the high voltage spark, holding down and like that, during horizontal operation. 1.0 0.6 0.8 t f -- IB TC=25C IC=6A fH=64kHz Collector current IC (A) Collector current IC (A) 40 Switching time tf (s) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1 DC 30 0.1 20 0.01 Non repetitive pulse TC=25C 1 3 10 30 100 300 1000 10 <1mA 0 0 500 1000 0.001 1500 2SC5270 2SC5270A 2000 0 1 2 3 4 5 Collector to emitter voltage VCE (V) Collector to emitter voltage VCE (V) End-of-scan current IB end (A) tstg -- IB 10 TC=25C 9 IC=6A fH=64kHz 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 Switching time tstg (s) End-of-scan current IB end (A) 2 |
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